Duplicate Question
The question on this page has been marked as a duplicate question.
Original Question
N-type silicon (Si) has been produced by doping with phosphorus (P). The charge-carrier population based on electrical conducti...Asked by Anonymous
N-type silicon (Si) has been produced by doping with phosphorus (P). The charge-carrier population based on electrical conductivity measurments is determined to be 3.091*1017 carriers/cm3 at room temperature.
Calculate the doping level of P (how much P has been added to the Si). Express your answer in units of g P / kg Si.
What is the majority charge carrier in the material described above?
p-type n-type electrons holes
Calculate the doping level of P (how much P has been added to the Si). Express your answer in units of g P / kg Si.
What is the majority charge carrier in the material described above?
p-type n-type electrons holes