Asked by Alan
N-type silicon (Si) has been produced by doping with phosphorus (P). The charge-carrier population based on electrical conductivity measurments is determined to be 3.091*10^17 carriers/cm3 at room temperature.
1. Calculate the doping level of P (how much P has been added to the Si). Express your answer in units of g P / kg Si.
2. What is the majority charge carrier in the material described above?
A. p-type
B. n-type
C. electrons
D. holes
1. Calculate the doping level of P (how much P has been added to the Si). Express your answer in units of g P / kg Si.
2. What is the majority charge carrier in the material described above?
A. p-type
B. n-type
C. electrons
D. holes
Answers
Answered by
anonyms
For 2, ans is electrons of course.
Answered by
anonyms
For 1= 3.091*10^17/Na*30.91= 1.59*10^41 convert in gP so may be 1.53*10^-5 gP. cant calculate further i am confused. till this it is just perfect
Answered by
anonyms
Ya got it, answer is i think 6.82*10^-3
Answered by
A
6.82*10^-3 is right
Answered by
himani.
currect answer is 6.82e-3
Answered by
oi
how did u do this
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