Question

The p-type region of a silicon p-n junction is doped with 1016 boron atoms per cubic centimeter, and the n-type region is doped with 1018 phosphorus atoms per cubic centimeter. Assume a step p-n junction and that all doping atoms are ionized. The intrinsic carrier concentration in silicon at 300K is 1.5∗1010cm−3.

What are the electron and hole concentrations (in cm−3) in the p-type and n-type regions at thermal equilibrium?

Hole concentration in p-type region (in 1016cm−3) :

Answer 1

1
2.25
1
225
0.8
0.325