We have discussed that a bare crystalline silicon surface contains many defects which act as SRH recombination centers. How can the surface recombination at the air/n-silicon interface be reduced?

Note that you can mark more than one answer.

By decreasing the doping of the n-layer.
By increasing the doping of the n-layer.
By depositing a thin insulating layer on top of the n-layer.
By depositing a thin conductive layer on top of the n-layer.

2 answers

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B and c