In state-of-the-art crystalline silicon solar cells technology, based on p-type silicon, a back surface field (BSF) is implemented. This BSF is implemented, because in this way:

The barrier for hole collection at the back contact is reduced, increasing the surface recombination velocity at the back contact.

The barrier for electron collection at the back contact is reduced, decreasing the surface recombination velocity at the back contact.

A barrier is created for hole collection at the back contact, increasing the surface recombination velocity at the back contact.

A barrier is created for electron collection at the back contact, decreasing the surface recombination velocity at the back contact.