The current density of an ideal p-n junction under illumination can be described by:

J(V)=Jph−J0(e^qV/kT−1)

where Jph is the photocurrent density, J0 the saturation current density, q the elementary charge, V the voltage, k the Boltzmann's constant, and T the temperature.

A crystalline silicon solar cell generates a photocurrent density of Jph=40mA/cm2 at T=300K. The saturation current density is J0=1.95∗10−10mA/cm2.

Assuming that the solar cell behaves as an ideal p-n junction, calculate the open-circuit voltage Voc (in V).

1 answer

544