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The current density of an ideal p-n junction under illumination can be described by: J(V)=Jph−J0(eqVkT−1) where Jph is the phot...Asked by Anonymous
The current density of an ideal p-n junction under illumination can be described by:
J(V)=Jph−J0(eqVkT−1)
where Jph is the photo-current density, J0 the saturation-current density, q the elementary charge, V the voltage, k the Boltzmann's constant, and T the temperature.
A crystalline silicon solar cell generates a photo-current density of Jph=40mA/cm2 at T=300K. The saturation-current density is J0=1.95∗10−10mA/cm2.
Assuming that the solar cell behaves as an ideal p-n junction, calculate the open-circuit voltage Voc (in V).
J(V)=Jph−J0(eqVkT−1)
where Jph is the photo-current density, J0 the saturation-current density, q the elementary charge, V the voltage, k the Boltzmann's constant, and T the temperature.
A crystalline silicon solar cell generates a photo-current density of Jph=40mA/cm2 at T=300K. The saturation-current density is J0=1.95∗10−10mA/cm2.
Assuming that the solar cell behaves as an ideal p-n junction, calculate the open-circuit voltage Voc (in V).
Answers
Answered by
bobpursley
If it is open circuit, then J(v)=0
or
Jph=Jo(e^(qV/T) )
Take the ln of each side
ln (Jph/Jo)=qV/T
Voc=T/q *ln(Jph/Jo )
or
Jph=Jo(e^(qV/T) )
Take the ln of each side
ln (Jph/Jo)=qV/T
Voc=T/q *ln(Jph/Jo )
Answered by
Anon
0.674 can someone help with the others quetion? Q4 5 6 7?
Answered by
Anonymous
voc= kt/q * jph/jo + 1
Answered by
patel k k
1402
Answered by
MANIRAGUHA Eric
0.659 V
Answered by
M.B.R.R.M.R.R.V.B.Medagama
0.673
Answered by
Anonymous
0.673
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