(a) Our wafer will be

  1. Mask aligner is used to:I. Alignment of wafer to mask II. Coat photoresist on wafer III. Expose the coated wafer IV. Developing
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  2. An oxide coated silicon wafer is patterned (circle of 30 µm diameter) using photolithography and is dipped in HF. After 2
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  3. A p-n junction is to be created by diffusing boron (B) into an n-type silicon wafer with an existing carrier concentration of
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  4. Which one of this option shows the correct alignment of alignment marks on wafer and mask? [Consider blue marks as alignment
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  5. our wafer will be doped with phosphorus to a conc. at which the material exhibits extrinsic behaviour.
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  6. the silicon wafer is coated with a layer of metallic aluminium which acts as an electrical contact.
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  7. the silicon wafer is coated with a layer of metallic aluminium which acts as a electric contact.
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  8. A p-n junction is to be created by diffusing boron into an n-type silicon wafer with an existing carrier conc.
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  9. An oxide layer is grown on silicon wafer by dry oxidation. The layer is coated with negative photoresist. The mask is shown in
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  10. The Gaussian error function can be approximated for small values of x as erf(x)≈x. Suppose a silicon wafer is exposed to
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