The p-type region of a silicon p-n junction is doped with boron atoms per cubic centimeter, and the n-type region is doped with phosphorus atoms per cubic centimeter. Assume a step p-n junction and that all doping atoms are ionized. The intrinsic carrier concentration in silicon at is .
What are the electron and hole concentrations (in ) in the p-type and n-type regions at thermal equilibrium?
Hole concentration in p-type region (in ) :
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