“Strained silicon” technology is a technique where a silicon thin film is deposited onto a silicon-germanium (SiGe) film. Both Si and SiGe have the same crystal structure, but the lattice parameter of SiGe is larger than that of pure silicon. Therefore, when a film of silicon is deposited on SiGe, the bonds in silicon are stretched apart (lattice parameters increase) and bonds in SiGe are compressed together (lattice parameters decrease). Based on what you know about how electronic bands form, how do you think the band gap of SiGe is changed when SiGe is deposited onto a silicon film compared to a bulk piece of SiGe? How do you think that the electrical conductivity of a compressed SiGe film compares to that of bulk SiGe? Please explain your reasoning.