Gallium arsenide (GaAs) is an expensive alloy used for high performance multijunction solar cells. A certain GaAs absorber layer is designed to absorb 95% of the incident red light λ=700nm . The complex refractive index of GaAs at this wavelength is given by n~GaAs=3.77+i0.141 . By what fraction can the thickness of the GaAs absorber layer be decreased, if we introduce a lambertian scatterer at the front of the absorber layer and an ideal reflector at the back? Give a percentage [%]

Question

Gallium arsenide (GaAs) is an expensive alloy used for high performance multijunction solar cells. A certain GaAs absorber layer is designed to absorb  95%  of the incident red light  λ=700nm . The complex refractive index of GaAs at this wavelength is given by  n~GaAs=3.77+i0.141 . By what fraction can the thickness of the GaAs absorber layer be decreased, if we introduce a lambertian scatterer at the front of the absorber layer and an ideal reflector at the back? Give a percentage  [%]