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Which material would you expect to have a greater bandgap energy between indium nitride (InN) and indium phosphide (InP)?
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Which material would you expect to have a greater bandgap energy between indium nitride (InN) and indium phosphide (InP)?
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Which material would you expect to have a greater bandgap energy between indium nitride and indium phosphide ?
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Gallium nitride (GaN) is a semiconductor with a bandgap Eg=3.2 eV. Calculate the absorption edge of GaN. Express your answer in
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Gallium nitride is a semiconductor with a bandgap 3.2eV . Calculate the absorption edge of GaN . Express your answer in units of
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